Friday 23 October 2026 4:00pm to 5:00pm
Cambridge Graphene Centre Seminar Room, Electrical Engineering Division, 9 JJ Thomson Avenue.
Prof. Song will discuss advances in wafer-scale growth of 2D chalcogenides and non-volatile ferroelectric control, highlighting progress towards integrating memory and logic in a single 2D material platform.
About
Two-dimensional (2D) chalcogenides offer atomically thin channels for future electronics, but their practical use has been limited by two bottlenecks: uniform synthesis at the wafer scale and energy-efficient, non-volatile control of their properties. In this talk, Prof. Song will present his group’s progress on both fronts. First, he will describe metal-organic chemical vapour deposition (MOCVD) of 2D chalcogenides, from transition metal dichalcogenides such as MoTe2 and WS2 to related layered compounds such as InSe/In2Se3 and FeSe. Phase-selective growth of semimetallic polymorphs provides low-resistance van der Waals contacts that approach the Schottky–Mott limit. Second, he will show how ferroelectric nitrides and oxides (AlScN and Hf0.5Zr0.5O2) enable non-volatile, multi-state gating of 2D transistors and memories, and how combining ferroelectric gating with ohmic contacts increases the on-state current and carrier density of 2D field-effect transistors. Together, these results point towards wafer-scale 2D electronics in which memory and logic share a single material platform.
Attend this talk to hear:
- How metal-organic chemical vapour deposition (MOCVD) enables wafer-scale, phase- and composition-selective growth of 2D chalcogenides.
- Why semimetallic van der Waals contacts can approach the Schottky–Mott limit and lower contact resistance.
- How ferroelectric AlScN and Hf0.5Zr0.5O2 enable non-volatile, multi-state gating of 2D transistors and memories.
- What combining ohmic contacts with ferroelectric gating means for on-state current and carrier density.
- How wafer-scale 2D platforms could bring memory and logic into a single material system.
About the speaker
Prof. Seunguk Song, Sungkyunkwan University (SKKU), Korea
Seunguk Song is an assistant professor in the Department of Energy Science at Sungkyunkwan University (SKKU) and a team leader at the IBS Center for 2D Quantum Heterostructures, Korea. He received his PhD in materials science and engineering from UNIST (2021) for his work on the large-area synthesis of two-dimensional (2D) semiconductors, and was a postdoctoral researcher at the University of Pennsylvania (2021–2024), where he developed ferroelectric AlScN-gated 2D transistors and memories. His group at SKKU focuses on wafer-scale metal-organic chemical vapour deposition (MOCVD) of 2D chalcogenides, phase-selective growth of van der Waals contacts, non-volatile ferroelectric gating and quantum light sources in 2D materials. His work has been published in journals including Nature Electronics, Nature Communications and ACS Nano.